NIF9N05CL

http://onsemi.com

2

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

Temperature Coefficient (Negative)

52

50.8

55

54

−9.3

59

59.5

V

V

mV/

°C

Zero Gate Voltage Drain Current

10

25

mA

Gate−Body Leakage Current

±22

±10

mA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

Threshold Temperature Coefficient (Negative)

1.3

1.75

−4.1

2.5

V

mV/

°C

Static Drain−to−Source On−Resistance (Note 3)

190

165

107

380

200

125

mW

3.8

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

f = 10 kHz

155

250

pF

Output Capacitance

60

100

Transfer Capacitance

25

40

Input Capacitance

f = 10 kHz

170

pF

Output Capacitance

70

Transfer Capacitance

30

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.