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NE5517N Datasheet(PDF) 5 Page - ON Semiconductor

Part # NE5517N
Description  Dual Operational Transconductance Amplifier
Download  14 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NE5517N Datasheet(HTML) 5 Page - ON Semiconductor

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NE5517, NE5517A, AU5517
http://onsemi.com
5
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT
VCMR
VOUT
10
10
10
10
1
0.1
mA1mA10mA
100
mA
1000
mA
AMPLIFIER BIAS CURRENT (IABC)
+125
°C
4
3
2
+25
°C
-55
°C
10
10
10
10
10
4
3
2
5
-50
°C -25°C0°C25°C50°C75°C100°C125°C
0V
(+)VIN = (−)VIN = VOUT = 36V
AMBIENT TEMPERATURE (TA)
10
10
10
10
10
4
3
2
0.1
mA1mA10mA
100
mA
1000
mA
AMPLIFIER BIAS CURRENT (IABC)
+125
°C
+25
°C
-55
°C
5
gM
mq
m
M
PINS 2, 15
OPEN
10
10
1
0.1
0.01
1
2
0.1
mA1mA10mA
100
mA
1000
mA
AMPLIFIER BIAS CURRENT (IABC)
PINS 2, 15
OPEN
10
10
10
10
1
3
2
4
INPUT DIFFERENTIAL VOLTAGE
+125
°C
+25
°C
0
1
23
45
6
7
5
0.1
mA1mA10mA
100
mA
1000
mA
AMPLIFIER BIAS CURRENT (IABC)
Figure 3. Input Offset Voltage
VS = ±15V
+125
°C
+25
°C
-55
°C
+125
°C
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
0.1
mA1mA10mA
100
mA
1000
mA
AMPLIFIER BIAS CURRENT (IABC)
Tamb = 25°C
VCMR
RLOAD =
∞
10
10
10
1
0.1
2
3
0.1
mA1mA10mA
100
mA
1000
mA
AMPLIFIER BIAS CURRENT (IABC)
Figure 4. Input Bias Current
VS = ±15V
+125
°C
+25
°C
-55
°C
10
10
10
10
1
3
4
0.1
mA1mA10mA
100
mA
1000
mA
AMPLIFIER BIAS CURRENT (IABC)
Figure 5. Input Bias Current
VS = ±15V
+125
°C
+25
°C
-55
°C
2
Figure 6. Peak Output Current
Figure 7. Peak Output Voltage and
Common-Mode Range
Figure 8. Leakage Current
Figure 9. Input Leakage
Figure 10. Transconductance
Figure 11. Input Resistance
VS = ±15V
VS = ±15V
VS = ±15V


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