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BYV74-400 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BYV74-400
Description  Dual rectifier diodes ultrafast
Download  6 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYV74-400 Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Dual rectifier diodes
BYV74 series
ultrafast
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
per diode
-
-
2.4
K/W
heatsink
both diodes conducting
-
-
1.4
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
45
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage (per diode)
I
F = 15 A; Tj = 150˚C
-
0.95
1.12
V
I
F = 15 A
-
1.08
1.25
V
I
F = 30 A
-
1.15
1.36
V
I
R
Reverse current (per diode)
V
R = VRRM
-10
50
µA
V
R = VRRM; Tj = 100 ˚C
-
0.3
0.8
mA
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Q
s
Reverse recovery charge (per
I
F = 2 A to VR ≥ 30 V;
-
40
60
nC
diode)
dI
F/dt = 20 A/µs
t
rr
Reverse recovery time (per
I
F = 1 A to VR ≥ 30 V;
-
50
60
ns
diode)
dI
F/dt = 100 A/µs
I
rrm
Peak reverse recovery current
I
F = 10 A to VR ≥ 30 V;
-
4.2
5.2
A
(per diode)
dI
F/dt = 50 A/µs; Tj = 100˚C
V
fr
Forward recovery voltage (per
I
F = 10 A; dIF/dt = 10 A/µs
-
2.5
-
V
diode)
August 1996
2
Rev 1.200


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