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AT45DB041B-CU Datasheet(PDF) 9 Page - ATMEL Corporation |
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AT45DB041B-CU Datasheet(HTML) 9 Page - ATMEL Corporation |
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9 / 35 page  9 3443C–DFLSH–5/05 AT45DB041B take place in a maximum time of t EP. During this time, the status register will indicate that the part is busy. If a sector is programmed or reprogrammed sequentially page-by-page, then the programming algorithm shown in Figure 17-1 on page 27 is recommended. Otherwise, if multiple bytes in a page or several pages are programmed randomly in a sector, then the programming algorithm shown in Figure 17-2 on page 28 is recommended. Each page within a sector must be updated/rewritten at least once within every 10,000 cumulative page erase/program operations in that sector. 5.4 Operation Mode Summary The modes described can be separated into two groups – modes which make use of the Flash memory array (Group A) and modes which do not make use of the Flash memory array (Group B). Group A modes consist of: 1. Main Memory Page Read 2. Main Memory Page to Buffer 1 (or 2) Transfer 3. Main Memory Page to Buffer 1 (or 2) Compare 4. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase 5. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase 6. Page Erase 7. Block Erase 8. Main Memory Page Program through Buffer 9. Auto Page Rewrite Group B modes consist of: 1. Buffer 1 (or 2) Read 2. Buffer 1 (or 2) Write 3. Status Register Read If a Group A mode is in progress (not fully completed) then another mode in Group A should not be started. However, during this time in which a Group A mode is in progress, modes in Group B can be started. This gives the Serial DataFlash the ability to virtually accommodate a continuous data stream. While data is being programmed into main memory from buffer 1, data can be loaded into buffer 2 (or vice versa). See application note AN-4 (“Using Atmel’s Serial DataFlash”) for more details. |
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