NCV7356

http://onsemi.com

5

Electrical Specification

All voltages are referenced to ground (GND). Positive

currents flow into the IC. The maximum ratings given in

the table below are limiting values that do not lead to a

permanent damage of the device but exceeding any of these

limits may do so. Long term exposure to limiting values

may affect the reliability of the device.

MAXIMUM RATINGS

Rating

Symbol

Condition

Min

Max

Unit

Supply Voltage, Normal Operation

−

−0.3

18

V

Short−Term Supply Voltage, Transient

Load Dump; t < 500 ms

−

40

V (peak)

Jump Start; t < 1.0 min

−

27

V

Transient Supply Voltage

ISO 7637/1 Pulse 1 (Note 2)

−50

−

V

Transient Supply Voltage

ISO 7637/1 Pulses 2 (Note 2)

−

100

V

Transient Supply Voltage

ISO 7637/1 Pulses 3A, 3B

−200

200

V

CANH Voltage

−20

40

V

−40

Transient Bus Voltage

ISO 7637/1 Pulse 1 (Note 3)

−50

−

V

Transient Bus Voltage

ISO 7637/1 Pulses 2 (Note 3)

−

100

V

Transient Bus Voltage

ISO 7637/1 Pulses 3A, 3B (Note 3)

−200

200

V

DC Voltage on Pin LOAD

Via RT > 2.0 k

W

−40

40

V

DC Voltage on Pins TxD, MODE1, MODE0, RxD

−

−0.3

7.0

V

ESD Capability of CANH

Human Body Model

Eq. to Discharge 100 pF with 1.5 k

W

−4000

4000

V

ESD Capability of Any Other Pin

Human Body Model

Eq. to Discharge 100 pF with 1.5 k

W

−2000

2000

V

Maximum Latchup Free Current at Any Pin

−

−500

500

mA

Storage Temperature

−

−55

150

°C

Junction Temperature

−

−40

150

°C

Lead Temperature Soldering

Reflow: (SMD styles only)

SOIC−14

60 s − 150 s above 183

°C

−

240 peak

°C

SOIC−8

60 s − 150 s above 217

°C

−

260 peak

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

3. ISO 7637 test pulses are applied to CANH via a coupling capacitance of 1.0 nF.

4. ESD measured per Q100−002 (EIA/JESD22−A114−A).

TYPICAL THERMAL CHARACTERISTICS

Parameter

Test Condition, Typical Value

Unit

Min Pad Board

1

, Pad Board

SOIC−8

Junction−to−Lead (psi−JL7,

57 (Note 5)

51 (Note 6)

°C/W

187 (Note 5)

128 (Note 6)

°C/W

SOIC−14

Junction−to−Lead (psi−JL8,

30 (Note 7)

30 (Note 8)

°C/W

122 (Note 7)

84 (Note 8)

°C/W

″ thick FR4.

″ thick FR4.

″ thick FR4.

″ thick FR4.