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BYV36A Datasheet(PDF) 3 Page - NXP Semiconductors |
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BYV36A Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 14 page  1996 Jul 01 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV36 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. IFRM repetitive peak forward current Ttp =60 °C; see Figs 8; 9 and 10 BYV36A to C − 18 A BYV36D and E − 17 A BYV36F and G − 15 A IFRM repetitive peak forward current Tamb =60 °C; see Figs 11; 12 and 13 BYV36A to C − 9A BYV36D and E − 8A BYV36F and G − 8A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax − 30 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Figs 17 and 18 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj =Tj max; see Figs 19; 20 and 21 BYV36A to C −− 1.00 V BYV36D and E −− 1.05 V BYV36F and G −− 1.05 V VF forward voltage IF =1A; see Figs 19; 20 and 21 BYV36A to C −− 1.35 V BYV36D and E −− 1.45 V BYV36F and G −− 1.45 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYV36A 300 −− V BYV36B 500 −− V BYV36C 700 −− V BYV36D 900 −− V BYV36E 1100 −− V BYV36F 1300 −− V BYV36G 1500 −− V IR reverse current VR =VRRMmax; see Fig.22 −− 5 µA VR =VRRMmax; Tj = 165 °C; see Fig.22 −− 150 µA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
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