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BYV32E Datasheet(PDF) 1 Page - NXP Semiconductors |
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BYV32E Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification Rectifier diodes BYV32E, BYV32EB series ultrafast, rugged FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 150 V/ 200 V • Fast switching • Soft recovery characteristic V F ≤ 0.85 V • Reverse surge capability • High thermal cycling performance I O(AV) = 20 A • Low thermal resistance I RRM = 0.2 A t rr ≤ 25 ns GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV32E series is supplied in the SOT78 conventional leaded package. The BYV32EB series is supplied in the SOT404 surface mounting package. PINNING SOT78 (TO220AB) SOT404 PIN DESCRIPTION 1 anode 1 (a) 2 cathode (k) 1 3 anode 2 (a) tab cathode (k) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV32E / BYV32EB -150 -200 V RRM Peaqk repetitive reverse - 150 200 V voltage V RWM Crest working reverse voltage - 150 200 V V R Continuous reverse voltage - 150 200 V I O(AV) Average rectified output current square wave; δ = 0.5; - 20 A (both diodes conducting) T mb ≤ 115 ˚C I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 20 A per diode T mb ≤ 115 ˚C I FSM Non-repetitive peak forward t = 10 ms - 125 A current per diode t = 8.3 ms - 137 A sinusoidal; with reapplied V RWM(max) I RRM Repetitive peak reverse current t p = 2 µs; δ = 0.001 - 0.2 A per diode I RSM Non-repetitive peak reverse t p = 100 µs - 0.2 A current per diode T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C 1 It is not possible to make connection to pin 2 of the SOT404 package k a1 a2 13 2 13 tab 2 12 3 tab July 1998 1 Rev 1.200 |
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