BYV29-300 datasheet(2/5 Pages) PHILIPS

Part #	BYV29-300

Description	Rectifier diodes ultrafast

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

2 / 5 page

Philips Semiconductors

Product specification

Rectifier diodes

BYV29 series

ultrafast

ELECTRICAL CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

F

Forward voltage

I

F = 8 A; Tj = 150˚C

-

0.90

1.03

V

I

F = 8 A

-

1.05

1.25

V

I

F = 20 A

-

1.20

1.40

V

I

R

Reverse current

V

R = VRRM

-

2.0

50

µA

V

R = VRRM; Tj = 100 ˚C

-

0.1

0.35

mA

Q

s

Reverse recovery charge

I

F = 2 A to VR ≥ 30 V;

-

40

60

nC

dI

F/dt = 20 A/µs

t

rr

Reverse recovery time

I

F = 1 A to VR ≥ 30 V;

-

50

60

ns

dI

F/dt = 100 A/µs

I

rrm

Peak reverse recovery current

I

F = 10 A to VR ≥ 30 V;

-

4.0

5.5

A

dI

F/dt = 50 A/µs; Tj = 100˚C

V

fr

Forward recovery voltage

I

F = 10 A; dIF/dt = 10 A/µs

-

2.5

-

V

Fig.1. Definition of t

rr, Qs and Irrm

Fig.2. Definition of V

fr

Fig.3. Maximum forward dissipation P

F = f(IF(AV));

square wave where I

F(AV) =IF(RMS) x √D.

Fig.4. Maximum forward dissipation P

F = f(IF(AV));

sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

Q

s

100%

10%

time

dI

dt

F

I

R

I

F

I

rrm

t

rr

0

5

10

15

0

5

10

15

0.5

0.2

0.1

BYV29

IF(AV) / A

PF / W

D = 1.0

Rs = 0.0190 Ohms

Vo = 0.8900 V

D =

tp

T

t

I

Tmb(max) / C

150

137.5

125

112.5

time

V F

V

fr

V F

I

F

024

68

10

0

2

4

6

8

10

12

a = 1.57

1.9

2.2

2.8

4

BYV29

Rs = 0.019 Ohms

Vo = 0.89V

IF(AV) / A

PF / W

Tmb(max) / C

150

145

140

135

130

125

120

September 1998

2

Rev 1.300

Similar Part No. - BYV29-300

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	BYV29-300	144Kb / 5P	Ultrafast Rectifier Revision: 07-Nov-07
Vishay Siliconix	BYV29-300-E345	135Kb / 5P	Ultrafast Rectifier Revision: 07-Nov-07
Seme LAB	BYV29-300M	22Kb / 2P	HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS
	BYV29-300M	26Kb / 2P	HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS
	BYV29-300M	26Kb / 2P	HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS

More results

Similar Description - BYV29-300

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BYV79	34Kb / 6P	Rectifier diodes ultrafast October 1994 Rev 1.100
	BYW29	33Kb / 6P	Rectifier diodes ultrafast October 1994 Rev 1.100
	BYR29F	45Kb / 6P	Rectifier diodes ultrafast September 1998 Rev 1.400
	BYT79	120Kb / 7P	Rectifier diodes ultrafast September 1998
	BYV29	119Kb / 7P	Rectifier diodes ultrafast September 1998
	BYV29F	52Kb / 7P	Rectifier diodes ultrafast February 1999 Rev 1.400
	BYV72F	40Kb / 6P	Rectifier diodes ultrafast October 1994 Rev 1.100
	BYW29F	41Kb / 6P	Rectifier diodes ultrafast October 1994 Rev 1.100
	BYQ28X	46Kb / 6P	Rectifier diodes ultrafast August 1996 Rev 1.000
	BYR29	43Kb / 5P	Rectifier diodes ultrafast September 1998 Rev 1.300
Guangdong Kexin Industr...	MURS260	819Kb / 2P	Ultrafast Rectifier Diodes

More results

BYV29-300 Datasheet(PDF) 2 Page - NXP Semiconductors

BYV29-300 Datasheet(HTML) 2 Page - NXP Semiconductors

Similar Part No. - BYV29-300

Similar Description - BYV29-300

Html Pages

1 2 3 4 5

Datasheet Download

Link URL