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BYV29-300 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYV29-300 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 5 page Philips Semiconductors Product specification Rectifier diodes BYV29 series ultrafast ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 8 A; Tj = 150˚C - 0.90 1.03 V I F = 8 A - 1.05 1.25 V I F = 20 A - 1.20 1.40 V I R Reverse current V R = VRRM - 2.0 50 µA V R = VRRM; Tj = 100 ˚C - 0.1 0.35 mA Q s Reverse recovery charge I F = 2 A to VR ≥ 30 V; - 40 60 nC dI F/dt = 20 A/µs t rr Reverse recovery time I F = 1 A to VR ≥ 30 V; - 50 60 ns dI F/dt = 100 A/µs I rrm Peak reverse recovery current I F = 10 A to VR ≥ 30 V; - 4.0 5.5 A dI F/dt = 50 A/µs; Tj = 100˚C V fr Forward recovery voltage I F = 10 A; dIF/dt = 10 A/µs - 2.5 - V Fig.1. Definition of t rr, Qs and Irrm Fig.2. Definition of V fr Fig.3. Maximum forward dissipation P F = f(IF(AV)); square wave where I F(AV) =IF(RMS) x √D. Fig.4. Maximum forward dissipation P F = f(IF(AV)); sinusoidal current waveform where a = form factor = I F(RMS) / IF(AV). Q s 100% 10% time dI dt F I R I F I rrm t rr 0 5 10 15 0 5 10 15 0.5 0.2 0.1 BYV29 IF(AV) / A PF / W D = 1.0 Rs = 0.0190 Ohms Vo = 0.8900 V D = tp tp T T t I Tmb(max) / C 150 137.5 125 112.5 time time V F V fr V F I F 024 68 10 0 2 4 6 8 10 12 a = 1.57 1.9 2.2 2.8 4 BYV29 Rs = 0.019 Ohms Vo = 0.89V IF(AV) / A PF / W Tmb(max) / C 150 145 140 135 130 125 120 September 1998 2 Rev 1.300 |
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