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BYV116B-25 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BYV116B-25 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Rectifier diodes BYV116, BYV116B series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 20 V/ 25 V • Reverse surge capability • High thermal cycling performance I O(AV) = 10 A • Low thermal resistance V F ≤ 0.54 V GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting package. PINNING SOT78 (TO220AB) SOT404 PIN DESCRIPTION 1 anode 1 (a) 2 cathode (k) 1 3 anode 2 (a) tab cathode (k) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV118- 20 25 BYV116B- 20 25 V RRM Peak repetitive reverse - 20 25 V voltage V RWM Working peak reverse - 20 25 V voltage V R Continuous reverse voltage T mb ≤ 124 ˚C - 20 25 V I O(AV) Average rectified forward square wave; δ = 0.5; T mb ≤ 123 ˚C - 10 A current (both diodes conducting) I FRM Repetitive peak forward square wave; δ = 0.5; T mb ≤ 123 ˚C - 10 A current per diode I FSM Non-repetitive peak forward t = 10 ms - 50 A current per diode t = 8.3 ms - 55 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current per diode limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C 1. It is not possible to make connection to pin 2 of the SOT404 package. k a1 a2 13 2 13 tab 2 12 3 tab March 1998 1 Rev 1.000 |
Similar Part No. - BYV116B-25 |
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Similar Description - BYV116B-25 |
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