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BYQ28EB Datasheet(PDF) 4 Page - NXP Semiconductors |
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BYQ28EB Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page Philips Semiconductors Product specification Rectifier diodes BYQ28E, BYQ28EB, BYQ28ED series ultrafast, rugged Fig.7. Maximum t rr at Tj = 25 ˚C; per diode Fig.8. Maximum I rrm at Tj = 25 ˚C; per diode Fig.9. Typical and maximum forward characteristic I F = f(VF); parameter Tj Fig.10. Maximum Q s at Tj = 25 ˚C; per diode Fig.11. Transient thermal impedance; per diode; Z th j-mb = f(tp). 1 10 trr / ns 110 100 1000 100 dIF/dt (A/us) IF=1A IF=5A 0.1 1.0 10 100 Qs / nC 1.0 10 100 -dIF/dt (A/us) IF=5A IF=2A IF=1A 10 1 0.1 0.01 Irrm / A 1 10 100 -dIF/dt (A/us) IF=5A IF=1A 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 BYQ28E pulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) D = tp tp T T P t D 01 15 10 5 0 0.5 VF / V 1.5 IF / A typ max Tj=150C Tj=25C BYQ28 October 1998 4 Rev 1.300 |
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