NCP1010AP100G datasheet(10/24 Pages) ONSEMI

Part #	NCP1010AP100G

Description	Self?뭆upplied Monolithic Switcher for Low Standby?뭁ower Offline SMPS

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014

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Figure 16. NCP101X Facing a Fault Condition (Vin = 150 Vdc)

Tstart

Tsw

TLatch

1 V Ripple

Latch--off

Level

The rising slope from the latch--off level up to 8.5 V

is expressed by: Tstart =

ΔV1 · C

IC1

. The time during which

the IC actually pulses is given by tsw =

ΔV2 · C

ICC1

.

Finally,

the

latch--off

time

can

be

derived

using the same formula topology: TLatch =

ΔV3 · C

ICC2

.

From these three definitions, the burst duty--cycle

can be computed: dc =

Tsw

Tstart + Tsw + TLatch

(eq. 2)

.

dc =

ΔV2

ICC1 ·

ΔV2

ICC1 +

ΔV1

IC1 +

ΔV3

ICC2

(eq. 3) .

Feeding

the

equation with values extracted from the parameter section

gives a typical duty--cycle of 13%, precluding any lethal

thermal runaway while in a fault condition.

DSS Internal Dissipation

The Dynamic Self--Supplied pulls energy out from the

drain pin. In Flyback--based converters, this drain level can

easily go above 600 V peak and thus increase the stress on the

DSS startup source. However, the drain voltage evolves with

time and its period is small compared to that of the DSS. As

a result, the averaged dissipation, excluding capacitive losses,

can be derived by: PDSS = ICC1 · < Vds(t) > . (eq. 4) .

Figure 17 portrays a typical drain--ground waveshape where

leakage effects have been removed.

Figure 17. A typical drain--ground waveshape

where leakage effects are not accounted for.

Vds(t)

Vin

Vr

toff

dt

ton

t

Tsw

By looking at Figure 17, the average result can easily be

derived by additive square area calculation:

< Vds(t) >= Vin · (1 − d) + Vr ·

toff

Tsw

(eq. 5)

By developing Equation 5, we obtain:

< Vds(t) >= Vin − Vin ·

ton

Tsw +

Vr · toff

Tsw

(eq. 6)

toff can be expressed by: toff = Ip ·

Lp

Vr

(eq. 7)

where ton

can be evaluated by: ton = Ip ·

Lp

Vin

(eq. 8)

.

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