NCN6010_06 datasheet(9/16 Pages) ONSEMI

Part #	NCN6010

Description	SIM Card Supply and Level Shifter

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Manufacturer	ONSEMI [ON Semiconductor]

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NCN6010

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9

Figure 5. Power Down Sequence Oscillogram

Level Shifters

When the SIM card voltage is either higher or lower than

the MPU VDD supply, the level shifters can be

reprogrammed to cope with the expected output voltage.

When the MPU and the SIM card operate under the same

supply voltage, the DC−DC converter is not activated

(SIM_VCC = VDD –50 mV) and the signals go directly

through the level shifters.

The bi−directional I/O line provides a way to

automatically adapt the voltage difference between the

mCU

and the SIM card. In addition with the pull up resistor, an

active pull up circuit (Figure 6 Q1 and Q2) provides a fast

charge of the stray capacitance, yielding a rise time fully

within the ISO/EMV specifications.

Figure 6. Basic I/O Line Interface

GND

VDD

I/O

20 k

SIM_IO

VCC

LOGIC

IO/CONTROL

200 ns

GND

Q3

Q1

Q2

The typical waveform provided in Figure 7 shows how the

accelerator operates. During the first 200 ns (typical), the

slope of the rise time is solely a function of the pull up

resistor associated with the stray capacitance. During this

period, the PMOS devices are not activated since the input

voltage is below their Vgs threshold. When the input slope

crosses the Vgsth, the opposite one shot is activated,

providing a low impedance to charge the capacitance, thus

increasing the rise time as depicted in Figure 7. The same

mechanism applies for the opposite side of the line to make

sure the system is optimum.

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