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BYD31J Datasheet(PDF) 3 Page - NXP Semiconductors |
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BYD31J Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 9 page  1996 Sep 18 3 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD31 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. PRSM non-repetitive peak reverse power dissipation t=20 µs half sine wave; Tj =Tj max prior to surge BYD31D to J − 100 W BYD31K and M − 50 W Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.7 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 0.5 A; Tj =Tj max; see Fig.8 −− 1.15 V IF = 0.5 A; see Fig.8 −− 1.35 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYD31D 300 −− V BYD31G 500 −− V BYD31J 700 −− V BYD31K 900 −− V BYD31M 1100 −− V IR reverse current VR =VRRMmax; see Fig.9 −− 1 µA VR =VRRMmax; Tj = 165 °C; see Fig.9 −− 75 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25A see Fig.12 BYD31D to J −− 250 ns BYD31K and M −− 300 ns Cd diode capacitance f = 1 MHz; VR =0V; see Fig.10 − 9 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1A/µs; see Fig.13 BYD31D to J −− 6A/ µs BYD31K and M −− 5A/ µs SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT dI R dt -------- |
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