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NTTD1P02R2 Datasheet(PDF) 1 Page - ON Semiconductor |
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NTTD1P02R2 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: NTTD1P02R2/D NTTD1P02R2 Power MOSFET −1.45 Amps, −20 Volts P−Channel Enhancement Mode Dual Micro8t Package Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Miniature Dual Micro8 Surface Mount Package • Diode Exhibits High Speed, Soft Recovery • Micro8 Mounting Information Provided • Pb−Free Package is Available Applications • Power Management in Portable and Battery−Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage − Continuous VGS "8.0 V Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 3) RqJA PD ID ID IDM 250 0.50 −1.45 −1.15 −10 °C/W W A A A Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 3) RqJA PD ID ID IDM 125 1.0 −2.04 −1.64 −16 °C/W W A A A Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −4.5 Vdc, Peak IL = −3.5 Apk, L = 5.6 mH, RG = 25 W) EAS 35 mJ Maximum Lead Temperature for Soldering Purposes for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR−4 or G−10 PCB, Steady State. 2. Mounted onto a 2” square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single sided), Steady State. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. Device Package Shipping† ORDERING INFORMATION NTTD1P02R2 Micro8 4000/Tape & Reel Dual P−Channel D S G −1.45 AMPERES −20 VOLTS 160 mW @ VGS = −4.5 http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. WW BCG G 1 8 S1 G1 S2 G2 D1 D1 D2 D2 MARKING DIAGRAM & PIN ASSIGNMENT Micro8 CASE 846A STYLE 2 1 8 BC = Specific Device Code WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) NTTD1P02R2G Micro8 (Pb−Free) 4000/Tape & Reel |
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