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NTTD1P02R2 Datasheet(PDF) 1 Page - ON Semiconductor

Part # NTTD1P02R2
Description  Power MOSFET -1.45 Amps, -20 Volts
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTTD1P02R2 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1
Publication Order Number:
NTTD1P02R2/D
NTTD1P02R2
Power MOSFET
−1.45 Amps, −20 Volts
P−Channel Enhancement Mode
Dual Micro8t Package
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual Micro8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Micro8 Mounting Information Provided
Pb−Free Package is Available
Applications
Power Management in Portable and Battery−Powered Products,
i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage − Continuous
VGS
"8.0
V
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 3)
RqJA
PD
ID
ID
IDM
250
0.50
−1.45
−1.15
−10
°C/W
W
A
A
A
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 3)
RqJA
PD
ID
ID
IDM
125
1.0
−2.04
−1.64
−16
°C/W
W
A
A
A
Operating and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = −20 Vdc, VGS = −4.5 Vdc,
Peak IL = −3.5 Apk, L = 5.6 mH,
RG = 25 W)
EAS
35
mJ
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, Steady State.
2. Mounted onto a 2” square FR−4 Board
(1 in sq, 2 oz Cu 0.06″ thick single sided), Steady State.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
Device
Package
Shipping
ORDERING INFORMATION
NTTD1P02R2
Micro8
4000/Tape & Reel
Dual P−Channel
D
S
G
−1.45 AMPERES
−20 VOLTS
160 mW @ VGS = −4.5
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
WW
BCG
G
1
8
S1 G1 S2 G2
D1 D1 D2 D2
MARKING DIAGRAM &
PIN ASSIGNMENT
Micro8
CASE 846A
STYLE 2
1
8
BC
= Specific Device Code
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
NTTD1P02R2G
Micro8
(Pb−Free)
4000/Tape & Reel


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