NTMSD3P102R2 datasheet(6/9 Pages) ONSEMI

Part #	NTMSD3P102R2

Description	P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual Dual SO-8 Package

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NTMSD3P102R2

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6

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

Figure 13. Diode Reverse Recovery Waveform

Figure 14. FET Thermal Response

1.0

0.1

0.01

1E−03

1E−02

1E−01

1E+00

1E+01

1E+02

1E+03

D = 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

0.0014 F 0.0073 F 0.022 F

0.105 F

0.484 F

Ambient

Chip

Junction 2.32 W

18.5 W

50.9 W

37.1 W

56.8 W

Normalized to RqJA at Steady State (1″ pad)

3.68 F

24.4 W

t, TIME (s)

TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS

TJ = 125°C

0.7

1.0

0.1

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

10

1.0

VF, MAXIMUM INSTANTANEOUS

FORWARD VOLTAGE (VOLTS)

1.4

0

1.0

0.1

0.4

0.2

0.3

0.5

0.6

0.8

0.9

0.2

0.4

0.6

0.8

10

1.0

1.2

85°C

25°C

−40°

C

TJ = 125°C

25°C

85°C

Figure 15. Typical Forward Voltage

Figure 16. Maximum Forward Voltage

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NTMSD3P102R2 Datasheet(PDF) 6 Page - ON Semiconductor

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