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NTMD3P03R2 Datasheet(PDF) 1 Page - ON Semiconductor

Part # NTMD3P03R2
Description  Power MOSFET -3.05 Amps, -30 Volts
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMD3P03R2 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1
Publication Order Number:
NTMD3P03R2/D
NTMD3P03R2
Power MOSFET
−3.05 Amps, −30 Volts
Dual P−Channel SOIC−8
Features
High Efficiency Components in a Dual SOIC−8 Package
High Density Power MOSFET with Low RDS(on)
Miniature SOIC−8 Surface Mount Package − Saves Board Space
Diode Exhibits High Speed with Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for the SOIC−8 Package is Provided
Pb−Free Package is Available
Applications
DC−DC Converters
Low Voltage Motor Control
Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−30
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
171
0.73
−2.34
−1.87
−8.0
°C/W
W
A
A
A
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
100
1.25
−3.05
−2.44
−12
°C/W
W
A
A
A
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
62.5
2.0
−3.86
−3.1
−15
°C/W
W
A
A
A
Operating and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = −30 Vdc, VGS = −4.5 Vdc, Peak IL
= −7.5 Apk, L = 5 mH, RG = 25 W)
EAS
140
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10 PCB, t = Steady State.
2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick
single sided), t = steady state.
3. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick
single sided), t ≤ 10 seconds.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
P−Channel
D
S
G
http://onsemi.com
VDSS
RDS(ON) Typ
ID Max
−30 V
85 mW @ −10 V
−3.05 A
SOIC−8
SUFFIX NB
CASE 751
STYLE 11
MARKING DIAGRAM*
AND PIN ASSIGNMENT
ED3P03= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ED3P03
AYWW G
G
1
8
1
8
S1 G1 S2 G2
D1 D1 D2 D2
*For additional marking information, refer to
Application Note AND8002/D.
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
Device
Package
Shipping
ORDERING INFORMATION
NTMD3P03R2
SOIC−8
2500/Tape & Reel
NTMD3P03R2G
SOIC−8
(Pb−Free)
2500/Tape & Reel


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