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NTMD3P03R2 Datasheet(PDF) 1 Page - ON Semiconductor |
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NTMD3P03R2 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 2 1 Publication Order Number: NTMD3P03R2/D NTMD3P03R2 Power MOSFET −3.05 Amps, −30 Volts Dual P−Channel SOIC−8 Features • High Efficiency Components in a Dual SOIC−8 Package • High Density Power MOSFET with Low RDS(on) • Miniature SOIC−8 Surface Mount Package − Saves Board Space • Diode Exhibits High Speed with Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Mounting Information for the SOIC−8 Package is Provided • Pb−Free Package is Available Applications • DC−DC Converters • Low Voltage Motor Control • Power Management in Portable and Battery−Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −30 V Gate−to−Source Voltage − Continuous VGS ±20 V Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 171 0.73 −2.34 −1.87 −8.0 °C/W W A A A Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 100 1.25 −3.05 −2.44 −12 °C/W W A A A Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 62.5 2.0 −3.86 −3.1 −15 °C/W W A A A Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −30 Vdc, VGS = −4.5 Vdc, Peak IL = −7.5 Apk, L = 5 mH, RG = 25 W) EAS 140 mJ Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Minimum FR−4 or G−10 PCB, t = Steady State. 2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single sided), t = steady state. 3. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. P−Channel D S G http://onsemi.com VDSS RDS(ON) Typ ID Max −30 V 85 mW @ −10 V −3.05 A SOIC−8 SUFFIX NB CASE 751 STYLE 11 MARKING DIAGRAM* AND PIN ASSIGNMENT ED3P03= Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ED3P03 AYWW G G 1 8 1 8 S1 G1 S2 G2 D1 D1 D2 D2 *For additional marking information, refer to Application Note AND8002/D. (Note: Microdot may be in either location) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D Device Package Shipping† ORDERING INFORMATION NTMD3P03R2 SOIC−8 2500/Tape & Reel NTMD3P03R2G SOIC−8 (Pb−Free) 2500/Tape & Reel |
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