NTHD4401P datasheet(4/6 Pages) ONSEMI

Part #	NTHD4401P

Description	Power MOSFET -20 V, -3.0 A, Dual P-Channel, ChipFET

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NTHD4401P

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

VDS = 0 V

VGS = 0 V

−VGS

5

10

600

300

200

100

0

20

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

02

6

1

4

1

0

Qg, TOTAL GATE CHARGE (nC)

TJ = 25°C

Coss

Ciss

Crss

ID = −2.1 A

TJ = 25°C

QT

500

3

2.5

2

3

12

10

8

2

0

Q2

Q1

10

1

10

1

100

RG, GATE RESISTANCE (OHMS)

VDD = −16 V

ID = −2.1 A

VGS = −4.5 V

100

50

400

5

4

6

td(off)

td(on)

tf

tr

−VGS −VDS

−VDS

15

1.5

0.5

3.5

0.9

0.5

0

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

VGS = 0 V

TJ = 25°C

2.5

0.7

0.5

0.3

1

1.5

2

24

8

10

20

16

Figure 7. Drain−to−Source Leakage Current

vs. Voltage

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

12

VGS = 0 V

TJ = 150°C

TJ = 100°C

100

1000

10000

610

18

14

Figure 8. Capacitance Variation

Figure 9. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Figure 10. Resistive Switching Time Variation

vs. Gate Resistance

Figure 11. Diode Forward Voltage vs. Current

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