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NTGD4161P Datasheet(PDF) 4 Page - ON Semiconductor |
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NTGD4161P Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 5 page NTGD4161P http://onsemi.com 4 TYPICAL PERFORMANCE CURVES 0 2 4 6 8 10 0 1 2 345 QG, TOTAL GATE CHARGE (nC) ID = −2.1 A TJ = 25°C 0 0.1 0.2 0.3 0.3 0.4 0.6 0.8 0.9 1.0 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) VGS = 0 V TJ = 150°C TJ = −40°C 0.01 0.1 1 100 0.1 1 10 100 100 ms 1 ms 10 ms dc RDS(on) Limit Thermal Limit Package Limit −VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = −10 V Single Pulse TA = 25°C 0 50 100 150 200 250 DRAIN−TO−SOURCE VOLTAGE (V) CISS COSS CRSS TJ = 25°C VGS = 0 V 0 5 10 15 20 25 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge Figure 9. Diode Forward Voltage versus Current Figure 10. Maximum Rated Forward Biased Safe Operating Area 300 350 30 0 2 4 6 8 10 6 QT QGS QGD 0.7 0.5 TJ = 125°C TJ = 25°C 0.4 0.5 0.6 0.7 0.8 10 VGS VDS Figure 11. FET Thermal Response t, time (s) 1E−06 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03 0.001 0.01 0.1 1.0 1E−05 1E−04 Single Pulse 0.01 0.02 0.05 0.1 0.2 0.5 |
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