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NB6N11S Datasheet(PDF) 3 Page - ON Semiconductor |
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NB6N11S Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 9 page NB6N11S http://onsemi.com 3 Table 2. ATTRIBUTES Characteristics Value ESD Protection Human Body Model Machine Model Charged Device Model > 2 kV > 200 V > 1 kV Moisture Sensitivity, Indefinite Time Out of Drypack (Note 2) Pb Pkg Pb−Free Pkg QFN−16 − 1 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Transistor Count 225 Devices Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 2. For additional information, see Application Note AND8003/D. Table 3. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Unit VCC Positive Power Supply GND = 0 V 3.8 V VIN Positive Input GND = 0 V VIN ≤ VCC 3.8 V IIN Input Current Through RT (50 W Resistor) Static Surge 35 70 mA mA IOSC Output Short Circuit Current Line−to−Line (Q to Q) Line−to−End (Q or Q to GND) Q or Q to GND Q to Q Continuous Continuous 12 24 mA TA Operating Temperature Range QFN−16 −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) (Note 3) 0 lfpm 500 lfpm QFN−16 QFN−16 41.6 35.2 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) 1S2P (Note 3) QFN−16 4.0 °C/W Tsol Wave Solder Pb Pb−Free 265 265 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3. JEDEC standard multilayer board − 1S2P (1 signal, 2 power) with 8 filled thermal vias under exposed pad. |
Similar Part No. - NB6N11S_06 |
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Similar Description - NB6N11S_06 |
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