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MURHB840CT Datasheet(PDF) 2 Page - ON Semiconductor

Part # MURHB840CT
Description  ULTRAFAST RECTIFIER 8.0 AMPERES, 400 VOLTS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MURHB840CT Datasheet(HTML) 2 Page - ON Semiconductor

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MURHB840CT
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
400
V
Average Rectified Forward Current
(Rated VR, TC = 120°C) Total Device
IF(AV)
4.0
8.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave,
20 kHz, TC = 120°C)
IFM
8.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
100
A
Controlled Avalanche Energy
WAVAL
20
mJ
Operating Junction and Storage Temperature Range
TJ, Tstg
−65 to +175
°C
THERMAL CHARACTERISTICS (Per Leg)
Rating
Symbol
Value
Unit
Maximum Thermal Resistance, Junction−to−Case
RqJC
3.0
°C/W
Maximum Thermal Resistance, Junction−to−Ambient
RqJA
50
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 4.0 A, TC = 150°C)
(iF = 4.0 A, TC = 25°C)
vF
1.9
2.2
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TC = 150°C)
(Rated DC Voltage, TC = 25°C)
iR
500
10
mA
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
trr
28
ns
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤2.0%


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