MUN5133T1 datasheet(3/12 Pages) ONSEMI

Part #	MUN5133T1

Description	Bias Resistor Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5111T1 Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector−Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter−Base Cutoff Current

MUN5111T1

(VEB = 6.0 V, IC = 0)

MUN5112T1

MUN5113T1

MUN5114T1

MUN5115T1

MUN5116T1

MUN5130T1

MUN5131T1

MUN5132T1

MUN5133T1

MUN5134T1

MUN5135T1

MUN5136T1

MUN5137T1

IEBO

−

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

0.05

0.13

mAdc

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector−Emitter Breakdown Voltage (Note 4)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS (Note 4)

DC Current Gain

MUN5111T1

(VCE = 10 V, IC = 5.0 mA)

MUN5112T1

MUN5113T1

MUN5114T1

MUN5115T1

MUN5116T1

MUN5130T1

MUN5131T1

MUN5132T1

MUN5133T1

MUN5134T1

MUN5135T1

MUN5136T1

MUN5137T1

hFE

35

60

80

160

3.0

8.0

15

80

60

100

140

250

5.0

15

27

140

130

140

150

140

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)

(IC = 10 mA, IB = 5 mA)

MUN5130T1/MUN5131T1

(IC = 10 mA, IB = 1 mA)

MUN5115T1/MUN5116T1/

MUN5132T1/MUN5133T1/MUN5134T1

VCE(sat)

−

0.25

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

MUN5111T1

MUN5112T1

MUN5114T1

MUN5115T1

MUN5116T1

MUN5130T1

MUN5131T1

MUN5132T1

MUN5133T1

MUN5134T1

MUN5135T1

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)

MUN5113T1

(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)

MUN5136T1

(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)

MUN5137T1

VOL

−

0.2

Vdc

4. Pulse Test: Pulse Width < 300

ms, Duty Cycle < 2.0%

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