MUN5114DW1T1G datasheet(7/20 Pages) ONSEMI

Part #	MUN5114DW1T1G

Description	Dual Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5111DW1T1 Series

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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113DW1T1

Figure 12. VCE(sat) versus IC

IC, COLLECTOR CURRENT (mA)

1

0.1

0.01

0

102030

40

75°C

25°C

Figure 13. DC Current Gain

1000

100

10

1

10

100

IC, COLLECTOR CURRENT (mA)

−25°C

Figure 14. Output Capacitance

Figure 15. Output Current versus Input Voltage

100

10

1

0.1

0.01

0.001

010

25°C

Vin, INPUT VOLTAGE (VOLTS)

−25°C

50

010

20

30

40

1

0.8

0.6

0.4

0.2

0

VR, REVERSE BIAS VOLTAGE (VOLTS)

1

2

3

4

5

6

7

8

9

Figure 16. Input Voltage versus Output Current

100

10

1

0.1

0

10

20

30

40

IC, COLLECTOR CURRENT (mA)

TA =−25°C

25°C

75°C

50

IC/IB = 10

TA =−25°C

25°C

TA =75°C

f = 1 MHz

lE = 0 V

TA = 25°C

VO = 5 V

TA =75°C

VO = 0.2 V

VCE = 10 V

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