MUN5111T1G datasheet(8/12 Pages) ONSEMI

Part #	MUN5111T1G

Description	Bias Resistor Transistor

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MUN5111T1 Series

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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1

10

1

0.1

0

102030

40

50

100

10

1

0

246

8

10

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

2

4

6

8 1015 2025 3035 4045 50

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 17. VCE(sat) versus IC

IC, COLLECTOR CURRENT (mA)

0

204060

80

Figure 18. DC Current Gain

1

10

100

IC, COLLECTOR CURRENT (mA)

Figure 19. Output Capacitance

Figure 20. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (VOLTS)

Figure 21. Input Voltage versus Output Current

IC, COLLECTOR CURRENT (mA)

1

0.1

0.01

0.001

−25°C

25°C

TA =75°C

VCE = 10 V

180

160

140

120

100

80

60

40

20

0

2

4 6

8

15 20 40 50 60 70 80 90

f = 1 MHz

lE = 0 V

TA = 25°C

LOAD

+12 V

Figure 22. Inexpensive, Unregulated Current Source

Typical Application

for PNP BRTs

25°C

IC/IB = 10

TA =−25°C

TA =75°C

25°C

−25°C

VO = 5 V

VO = 0.2 V

25°C

TA =−25°C

75°C

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