© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 4

1

Publication Order Number:

MSC2295−BT1/D

MSC2295−BT1,

MSC2295−CT1

Preferred Device

NPN RF Amplifier

Transistors Surface Mount

Features

Rating

Symbol

Value

Unit

Collector−Base Voltage

30

Vdc

Collector−Emitter Voltage

20

Vdc

Emitter−Base Voltage

5.0

Vdc

Collector Current − Continuous

30

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Power Dissipation

200

mW

Junction Temperature

150

°C

Storage Temperature

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Characteristic

Symbol

Min

Max

Unit

Collector−Base Cutoff Current

−

0.1

mAdc

DC Current Gain (Note 1)

MSC2295−BT1

MSC2295−CT1

70

110

140

220

−

Collector−Gain — Bandwidth Product

150

−

MHz

Reverse Transistor Capacitance

−

1.5

pF

1. Pulse Test: Pulse Width

≤ 300 ms, D.C. ≤ 2%.

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

SC−59

CASE 318D

MARKING DIAGRAM

2

1

3

Vx M

G

G

Vx

= Device Code

x= B or C

M

= Date Code*

G

= Pb−Free Package

COLLECTOR

3

2

BASE

1

EMITTER

Device

Package

ORDERING INFORMATION

MSC2295−BT1

SC−59

3000/Tape & Reel

MSC2295−CT1

3000/Tape & Reel

3000/Tape & Reel

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SC−59

(Pb−Free)

SC−59

SC−59

(Pb−Free)

MSC2295−BT1G

MSC2295−CT1G

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.