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MC33362DWR2G Datasheet(PDF) 3 Page - ON Semiconductor |
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MC33362DWR2G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 14 page MC33362 http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (continued) (VCC = 20 V, RT = 10 k, CT = 390 pF, CPin 8 = 1.0 mF, for typical values TJ = 25°C, for min/max values TJ is the operating junction temperature range that applies (Note 3), unless otherwise noted.) Characteristic Unit Max Typ Min Symbol ERROR AMPLIFIER (Pins 9, 10) Open Loop Voltage Gain (TJ= 25°C) AVOL − 82 − dB Gain Bandwidth Product (f = 100 kHz, TJ= 25°C) GBW − 1.0 − MHz Output Voltage Swing High State (ISource = 100 mA, VFB < 2.0 V) Low State (ISink = 100 mA, VFB > 3.0 V) VOH VOL 4.0 − 5.3 0.2 − 0.35 V OVERVOLTAGE DETECTION (Pin 11) Input Threshold Voltage Vth 2.47 2.6 2.73 V Input Bias Current (Vin = 2.6 V) IIB − 100 500 nA PWM COMPARATOR (Pins 7, 9) Duty Cycle Maximum (VFB = 0 V) Minimum (VFB = 2.7 V) DC(max) DC(min) 48 − 50 0 52 0 % POWER SWITCH (Pin 16) Drain−Source On−State Resistance (ID = 200 mA) TJ = 25°C TJ = Tlow to Thigh RDS(on) − − 4.4 − 6.0 12 W Drain−Source Off−State Leakage Current (VDS = 500 V) ID(off) − 0.2 50 mA Rise Time tr − 50 − ns Fall Time tf − 50 − ns OVERCURRENT COMPARATOR (Pin 16) Current Limit Threshold (RT = 10 k) Ilim 0.7 0.9 1.1 A STARTUP CONTROL (Pin 1) Peak Startup Current (Vin = 50 V) (TJ = −25°C to 100°C) VCC = 0 V VCC = (Vth(on) − 0.2 V) Istart 2.0 2.0 5.0 5.0 8.0 8.0 mA Off−State Leakage Current (Vin = 50 V, VCC = 20 V) ID(off) − 40 200 mA UNDERVOLTAGE LOCKOUT (Pin 3) Startup Threshold (VCC Increasing) Vth(on) 11 14.5 18 V Minimum Operating Voltage After Turn−On VCC(min) 7.5 9.5 11.5 V TOTAL DEVICE (Pin 3) Power Supply Current Startup (VCC = 10 V, Pin 1 Open) Operating ICC − − 0.3 3.6 0.5 5.0 mA 2. Maximum power dissipation limits must be observed. 3. Tested junction temperature range for the MC33362: Tlow = −25°CThigh = +125°C 4. Tested junction temperature range for the MC33362: Tlow = −25°CThigh = +125°C |
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