MPSW45AZL1G datasheet(2/6 Pages) ONSEMI

Part #	MPSW45AZL1G

Description	One Watt Darlington Transistors NPN Silicon

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Manufacturer	ONSEMI [ON Semiconductor]

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MPSW45, MPSW45A

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = 100 mAdc, VBE = 0)

MPSW45

MPSW45A

V(BR)CES

40

50

−

Vdc

Collector −Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

MPSW45

MPSW45A

V(BR)CBO

50

60

−

Vdc

Emitter −Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

12

−

Vdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

MPSW45

(VCB = 40 Vdc, IE = 0)

MPSW45A

ICBO

−

100

nAdc

Emitter Cutoff Current

(VEB = 10 Vdc, IC = 0)

IEBO

−

100

nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 200 mAdc, VCE = 5.0 Vdc)

(IC = 500 mAdc, VCE = 5.0 Vdc)

(IC = 1.0 Adc, VCE = 5.0 Vdc)

hFE

25,000

15,000

4,000

150,000

−

Collector −Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 2.0 mAdc)

VCE(sat)

−

1.5

Vdc

Base− Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 2.0 mAdc)

VBE(sat)

−

2.0

Vdc

Base −Emitter On Voltage

(IC = 1.0 Adc, VCE = 5.0 Vdc)

VBE(on)

−

2.0

Vdc

SMALL− SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

−

MHz

Collector−Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Ccb

−

6.0

pF

1. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2.0%.

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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