Electronic Components Datasheet Search |
|
STS4DNFS30L Datasheet(PDF) 3 Page - STMicroelectronics |
|
STS4DNFS30L Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page STS4DNFS30L Electrical ratings 3/12 1 Electrical ratings Table 2. Schottky absolute maximum ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (vgs = 0) 30 V VDGR Drain-gate voltage (RGS = 20 kΩ)30 V VGS Gate- source voltage ±16 V ID Drain current (continuous) at TC = 25°C 4 A ID Drain current (continuous) at TC = 100°C 2.5 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 16 A PTOT Total dissipation at TC = 25°C dual operation 2 W Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 30 V IF(RMS) RMS forward current 20 A IF(AV) Average forward current TL=125°C δ=0.5 3A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A IRRM Repetitive peak reverse current tp = 2 µs F=1 kHz 1A IRSM Non repetitive peak reverse current tp = 100 µs1 A dv/dt Critical rate of rise of reverse voltage 10000 V/ µs Table 3. Thermal data Rthj-a Thermal resistance junction-ambient MOSFET(1) 1. Mounted on FR-4 board (steady state) 62.5 °C/W °C/W TJ Junction temperature -55 to 150 °C Tstg Storage temperature range -55 to 150 °C |
Similar Part No. - STS4DNFS30L_07 |
|
Similar Description - STS4DNFS30L_07 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |