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STS4DNFS30L Datasheet(PDF) 3 Page - STMicroelectronics

Part # STS4DNFS30L
Description  N-channel 30V - 0.044ohm - 4A SO-8 STripFET TM MOSFET plus SCHOTTKY rectifier
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS4DNFS30L Datasheet(HTML) 3 Page - STMicroelectronics

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STS4DNFS30L
Electrical ratings
3/12
1
Electrical ratings
Table 2.
Schottky absolute maximum ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (vgs = 0)
30
V
VDGR
Drain-gate voltage (RGS = 20 kΩ)30
V
VGS
Gate- source voltage
±16
V
ID
Drain current (continuous) at TC = 25°C
4
A
ID
Drain current (continuous) at TC = 100°C
2.5
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
16
A
PTOT
Total dissipation at TC = 25°C dual operation
2
W
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse
voltage
30
V
IF(RMS)
RMS forward current
20
A
IF(AV)
Average forward current
TL=125°C
δ=0.5
3A
IFSM
Surge non repetitive forward
current
tp = 10 ms
Sinusoidal
75
A
IRRM
Repetitive peak reverse current
tp = 2
µs
F=1 kHz
1A
IRSM
Non repetitive peak reverse
current
tp = 100
µs1
A
dv/dt
Critical rate of rise of reverse
voltage
10000
V/
µs
Table 3.
Thermal data
Rthj-a
Thermal resistance junction-ambient
MOSFET(1)
1.
Mounted on FR-4 board (steady state)
62.5
°C/W
°C/W
TJ
Junction temperature
-55 to 150
°C
Tstg
Storage temperature range
-55 to 150
°C


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