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STS4DNFS30 Datasheet(PDF) 3 Page - STMicroelectronics |
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STS4DNFS30 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page STS4DNFS30 Electrical ratings 3/12 1 Electrical ratings Table 1. Mosfet absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 4.5 A ID Drain current (continuous) at TC = 100°C 3.2 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 13 A PTOT Total dissipation at TC = 25°C 2 W Table 2. Schottky absolute maximum ratings Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 30 V IF(RMS) RMS forward current 10 A IF(AV) Average forward current TL=125°C δ=0.5 4A IFSM Surge non repetitive forward current tp=10ms Sinusoidal 75 A IRRM Repetitive peak reverse current tp=2µs F=1kHz 1A IRSM Non repetitive peak reverse current tp=100µs 1 A dv/dt Critical rate of rise of reverse voltage 10000 v/µs Table 3. Thermal data Symbol Parameter Value Unit Rthj-amb Thermal resistance junction-amb Mosfet (1) 1. Mounted on FR-4 board (steady state) 62.5 °C/W Tstg Storage temperature range Max -55 to 150 °C Tj Junction temperature -55 to 150 °C |
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