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NUP2105LT3 Datasheet(PDF) 2 Page - ON Semiconductor |
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NUP2105LT3 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NUP2105L http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol Rating Value Unit PPK Peak Power Dissipation 8 x 20 ms Double Exponential Waveform (Note 1) 350 W TJ Operating Junction Temperature Range −55 to 150 °C TJ Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature (10 s) 260 °C ESD Human Body model (HBM) Machine Model (MM) IEC 61000−4−2 Specification (Contact) 16 400 30 kV V kV Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not im- plied, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Unit VRWM Reverse Working Voltage (Note 2) 24 V VBR Breakdown Voltage IT = 1 mA (Note 3) 26.2 32 V IR Reverse Leakage Current VRWM = 24 V 15 100 nA VC Clamping Voltage IPP = 5 A (8 x 20 ms Waveform) (Note 4) 40 V VC Clamping Voltage IPP = 8 A (8 x 20 ms Waveform) (Note 4) 44 V IPP Maximum Peak Pulse Current 8 x 20 ms Waveform (Note 4) 8.0 A CJ Capacitance VR = 0 V, f = 1 MHz (Line to GND) 30 pF 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. |
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