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NUP2105LT3 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NUP2105LT3
Description  Dual Line CAN Bus Protector
Download  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NUP2105LT3 Datasheet(HTML) 2 Page - ON Semiconductor

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NUP2105L
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
Symbol
Rating
Value
Unit
PPK
Peak Power Dissipation
8 x 20
ms Double Exponential Waveform (Note 1)
350
W
TJ
Operating Junction Temperature Range
−55 to 150
°C
TJ
Storage Temperature Range
−55 to 150
°C
TL
Lead Solder Temperature (10 s)
260
°C
ESD
Human Body model (HBM)
Machine Model (MM)
IEC 61000−4−2 Specification (Contact)
16
400
30
kV
V
kV
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not im-
plied, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VRWM
Reverse Working Voltage
(Note 2)
24
V
VBR
Breakdown Voltage
IT = 1 mA (Note 3)
26.2
32
V
IR
Reverse Leakage Current
VRWM = 24 V
15
100
nA
VC
Clamping Voltage
IPP = 5 A (8 x 20 ms Waveform)
(Note 4)
40
V
VC
Clamping Voltage
IPP = 8 A (8 x 20 ms Waveform)
(Note 4)
44
V
IPP
Maximum Peak Pulse Current
8 x 20
ms Waveform (Note 4)
8.0
A
CJ
Capacitance
VR = 0 V, f = 1 MHz (Line to GND)
30
pF
2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT.
4. Pulse waveform per Figure 1.


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