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CAT808NTBI-28T1 Datasheet(PDF) 2 Page - Catalyst Semiconductor |
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CAT808NTBI-28T1 Datasheet(HTML) 2 Page - Catalyst Semiconductor |
2 / 8 page CAT808 Doc. No. 3024 Rev. A 2 © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice ABSOLUTE MAXIMUM RATINGS (1) Parameters Ratings Units Temperature under Bias -55 to +125 ºC Storage Temperature -65 to +150 ºC Voltage on any Pin with Respect to GND (2)(3) -2.0 to VDD + 2.0 V VDD with Respect to GND -2.0 to 7.0 V Lead Soldering temperature (10 seconds) +300 ºC TSOT-23-5 250 mW Power Dissipation SOT-89 500 mW RECOMMENDED OPERATING CONDITIONS Parameters Ratings Units VDD +1.2 to +6.0 V Operating Temperature Range -40 to +85 ºC DC ELECTRICAL CHARACTERISTICS TA = -40ºC to +85ºC, VDD = 1.2V to 6.0V Symbol Parameter Conditions Min Typ. Max Units VDET Detection Voltage, 27 TA = -40ºC to +85ºC 2.62 2.7 2.78 VDET Detection Voltage, 32 TA = -40ºC to +85ºC 3.12 3.2 3.28 V VDD = 4.0V - 2.4 5 VDD = 5.0V - 3.5 7 IDD Current Consumption VDD = 6.0V - 5 10 µA VDD=1.2V 0.6 1.4 - IOUT Output SinkCurrent VDS = 0.5V VDD=2.4V 2.9 5 - mA ILEAK Output Leakage Current VDS = 5.0V, VDD = 5.0V - - 1 µA TPHL/LH Response Time – - - 60 µs Δ - VDET ΔTA ● -VDET Detection Voltage Temperature Coefficient (4) TA = -40ºC to +85ºC - ±10 ±100 ppm/ºC Notes: (1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the devices at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. (2) The Minimum DC input voltage is -0.5V. During transitions, inputs may undershoot to -2.0V for periods of less than 20ns. Maximum DC voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20ns. (3) Latch-up protection is provided for stresses up to 100mA on all pins from -1V to VCC +1V. (4) The temperature change ratio in the detection voltage [ppm/°C] is calculated by using the following equation: ] C /º ppm [ 000 , 000 , 1 V - T V DET A DET × • Δ − Δ |
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