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IRFSL3207ZPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFSL3207ZPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 11 page 05/29/06 Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability www.irf.com 1 IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits PD - 97213 HEXFET® Power MOSFET GD S Gate Drain Source TO-220AB IRFB3207ZPbF D S D G D D S G D2Pak IRFS3207ZPbF TO-262 IRFSL3207ZPbF S D G VDSS 75V RDS(on) typ. 3.3m: max 4.1m: ID 170A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.50 RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W RθJA Junction-to-Ambient, TO-220 k ––– 62 RθJA Junction-to-Ambient (PCB Mount) , D 2Pak jk ––– 40 180 75 30 300 16 -55 to + 175 ± 20 2.0 10lb xin (1.1Nxm) 300 Max. 170 c 120 c 670 S D G |
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