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BUX86P Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUX86P Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P Fig.1. Test circuit resistive load. V IM = -6 to +8 V V CC = 250 V; tp = 20 µs; δ = tp / T = 0.01. R B and RL calculated from ICon and IBon requirements. Fig.2. Switching times waveforms with resistive load. Fig.3. Normalised power dissipation. PD% = 100 ⋅PD/PD 25 ˚C = f (Tmb) Fig.4. Transient thermal impedance. Z th j-mb = f(t); parameter D = tp/T Fig.5. Typical base-emitter saturation voltage. V BEsat = f(IB); parameter IC Fig.6. Typical collector-emitter saturation voltage. V CEsat = f(IB); parameter IC tp T VCC R R T.U.T. 0 VIM B L 1.0E-06 0.0001 0.01 1 0.01 0.1 1 10 0 0.2 0.1 0.05 0.02 0.5 Zth / (K/W) bux86p t / s D= D = tp T T P t D t p IC IB 10 % 10 % 90 % 90 % ton toff ts tf IBon -IBoff ICon tr 30ns 0 5 10 15 20 0.6 0.7 0.8 0.9 VBESAT / V BUX86P IB / mA IC = 0.2 A 0.1 A 50 mA 0 20 40 60 80 100 120 140 Tmb / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 0 2 4 6 8 10 IB / mA VCESAT / V BUX86P IC = 50 mA 0.1 A 0.2 A November 1995 3 Rev 1.100 |
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