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BUW84 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUW84 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page 1997 Aug 14 6 Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 Fig.6 Transient thermal impedance. handbook, full pagewidth MGB865 10 10−1 10−2 10−2 10−1 110 tp (ms) 102 104 103 1 Zth j−mb (K/W) tp tp T P t T δ = 0.75 0.50 0.33 0.20 0.10 0.02 0.05 0.01 0 δ = 1 Fig.7 Collector-emitter saturation voltage as a function of base current; typical values. handbook, full pagewidth 0.3 IB (A) 4 (1) 3 0 0 VCEsat (V) 0.05 0.25 MGB908 2 1 0.2 0.1 0.15 (2) (3) (4) (3) IC = 0.7 A. (4) IC =1A. Tj =25 °C; solid line: typical values; dotted line: maximum values. (1) IC = 0.3 A. (2) IC = 0.5 A. |
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