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BUW13AF Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUW13AF Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 16 page 1997 Aug 13 6 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF Fig.4 Forward bias SOAR. Tmb =25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits (independent of temperature). handbook, full pagewidth MGB929 1 10 1102 103 104 I VCE (V) 10 10−1 102 10−2 10−4 10−3 IC (A) IC max tp = 20 µs 1 ms 2 ms 5 ms 10 ms 20 ms DC ICM max δ = 0.01 BUW13F BUW13AF 50 µs 100 µs 200 µs 500 µs II |
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