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MC79L00 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MC79L00
Description  100 mA Negative Voltage Regulators
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC79L00 Datasheet(HTML) 2 Page - ON Semiconductor

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MC79L00, MC79L00A Series
http://onsemi.com
2
MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.)
Rating
Symbol
Value
Unit
Input Voltage
(−5 V)
(−12, −15, −18 V)
(−24 V)
VI
−30
−35
−40
Vdc
Power Dissipation
Case 29 (TO−92 Type)
TA = 25°C
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Case 751 (SOIC−8 Type) (Note 1)
TA = 25°C
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
PD
RqJA
RqJC
PD
RqJA
RqJC
Internally Limited
160
83
Internally Limited
180
45
W
°C/W
°C/W
W
°C/W
°C/W
Storage Temperature Range
Tstg
−65 to +150
°C
Junction Temperature
TJ
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. SOIC−8 Junction−to−Ambient Thermal Resistance is for minimum recommended pad size. Refer to Figure 9 for Thermal Resistance variation
versus pad size.
*This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD_883, Method 3015
Machine Model Method 200 V.
ELECTRICAL CHARACTERISTICS (VI = −10 V, IO = 40 mA, CI = 0.33 mF, CO = 0.1 mF, −40°C < TJ +125°C (for MC79LXXAB),
0
°C < TJ < +125°C (for MC79LXXAC)).
MC79L05C, AB
MC79L05AC, AB
Characteristics
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Output Voltage (TJ = +25°C)
VO
−4.6
−5.0
−5.4
−4.8
−5.0
−5.2
Vdc
Input Regulation (TJ = +25°C)
−7.0 Vdc
≥ VI ≥ −20 Vdc
−8.0 Vdc
≥ VI ≥ −20 Vdc
Regline
200
150
150
100
mV
Load Regulation
TJ = +25°C, 1.0 mA ≤ IO ≤ 100 mA
1.0 mA
≤ IO ≤ 40 mA
Regload
60
30
60
30
mV
Output Voltage
−7.0 Vdc
≥ VI ≥ −20 Vdc, 1.0 mA ≤ IO ≤ 40 mA
VI = −10 Vdc, 1.0 mA ≤ IO ≤ 70 mA
VO
−4.5
−4.5
−5.5
−5.5
−4.75
−4.75
−5.25
−5.25
Vdc
Input Bias Current
(TJ = +25°C)
(TJ = +125°C)
IIB
6.0
5.5
6.0
5.5
mA
Input Bias Current Change
−8.0 Vdc
≥ VI ≥ −20 Vdc
1.0 mA
≤ IO ≤ 40 mA
IIB
1.5
0.2
1.5
0.1
mA
Output Noise Voltage (TA = +25°C, 10 Hz ≤ f ≤ 100 kHz)
Vn
40
40
mV
Ripple Rejection (−8.0
≥ VI ≥ −18 Vdc, f = 120 Hz, TJ = +25°C)
RR
40
49
41
49
dB
Dropout Voltage (IO = 40 mA, TJ = +25°C)
|VI−VO|
1.7
1.7
Vdc


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