Electronic Components Datasheet Search |
|
BUW11AW Datasheet(PDF) 5 Page - NXP Semiconductors |
|
BUW11AW Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page 1997 Aug 14 4 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW Fig.2 Forward bias SOAR. Tmb ≤ 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs. IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 5 ms. (1) Ptot max line. (2) Second breakdown limits. handbook, full pagewidth MGB948 1 10 102 103 104 VCE (V) 10 10−1 10−2 102 10−3 IC (A) (1) (2) I II III IV IC max DC BUW11W BUW11AW ICM max |
Similar Part No. - BUW11AW |
|
Similar Description - BUW11AW |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |