MMBT5401-AE3-R datasheet(3/4 Pages) UTC

Part #	MMBT5401-AE3-R

Description	HIGH VOLTAGE SWITCHING TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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3 / 4 page

MMBT5401

PNP EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

3

www.unisonic.com.tw

QW-R206-011.C

■

TYPICAL CHARACTERICS

Fig.2 DC current Gain

Ic,Collector current (mA)

10

2

10

1

10

0

10

3

-10

3

-10

2

-10

1

-10

0

-10

-1

VCE=-5V

Fig.3 Base-Emitter on Voltage

Base-Emitter voltage (V)

0

-0.2

-0.4

-0.6

-0.8

-1.0

VCE=-5V

Fig.4 Saturation voltage

Fig.5 Current gain -bandwidth

product

Fig.1 Collector output Capacitance

VCE(sat)

VBE(sat)

Ic=10*IB

10

3

10

0

10

1

10

2

VCE=-10V

Collector-Base voltage (V)

-10

0

4

8

12

f=1MHz

IE=0

-10

-1

-10

-2

-10

1

-10

2

16

20

-10

1

-10

2

-10

3

-10

0

Ic,Collector current (mA)

-10

3

-10

2

-10

1

-10

0

-10

-1

Ic,Collector current (mA)

-10

3

-10

2

-10

1

-10

0

-10

-1

-10

0

-10

1

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