MRF6P23190HR6

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for CDMA base station applications with frequencies from 2300 to

2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

To be used in Class AB and Class C for WLL applications.

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14 dB

Drain Efficiency — 23.5%

IM3 @ 10 MHz Offset — -37.5 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -41 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +68

Vdc

Gate-Source Voltage

-0.5, +12

Vdc

Storage Temperature Range

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

200

°C

Derate above 25°C

CW

250

1.3

W

W/°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 100°C, 160 W CW

Case Temperature 83°C, 40 W CW

0.22

0.24

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF6P23190H

Rev. 2, 3/2007

Freescale Semiconductor

Technical Data

MRF6P23190HR6

2300 -2400 MHz, 40 W AVG., 28 V

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFET

CASE 375D-05, STYLE 1

NI-1230

© Freescale Semiconductor, Inc., 2007. All rights reserved.