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BUT11 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUT11 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 12 page 1997 Aug 13 1 Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN DESCRIPTION 1 base 2 collector; connected to mounting base 3 emitter andbook, halfpage MBK106 12 3 Fig.1 Simplified outline (TO-220AB) and symbol. handbook, halfpage 3 2 1 MBB008 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT VCESM collector-emitter peak voltage VBE =0 BUT11 850 V BUT11A 1000 V VCEO collector-emitter voltage open base BUT11 400 V BUT11A 450 V VCEsat collector-emitter saturation voltage see Figs 7 and 9 1.5 V IC collector current (DC) see Figs 2 and 4 5 A ICM collector current (peak value) see Fig. 4 10 A Ptot total power dissipation Tmb ≤ 25 °C; see Fig.3 100 W tf fall time resistive load; see Figs 11 and 12 0.8 µs THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction to mounting base 1.25 K/W |
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