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4N60L-TA3-T Datasheet(PDF) 7 Page - Unisonic Technologies |
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4N60L-TA3-T Datasheet(HTML) 7 Page - Unisonic Technologies |
7 / 8 page 4N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 7 of 8 www.unisonic.com.tw QW-R502-061,E TYPICAL CHARACTERISTICS(Cont.) 0 0 Drain Current, ID (A) 24 VGS=20V 1 2 4 5 6 On-Resistance Variation vs. Drain Current and Gate Voltage 3 68 10 12 Note: TJ=25℃ VGS=10V 1 0.1 0.2 Source-Drain Voltage, VSD (V) On State Current vs. Allowable Case Temperature 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 150℃ 25℃ Notes: 1. VGS=0V 2. 250µs Test 1200 0 0.1 Drain-SourceVoltage, VDS (V) 1000 200 110 Ciss 800 600 Notes: 1. VGS=0V 2. f = 1MHz Ciss=Cgs+Cgd (Cds=shorted ) C oss=Cds+Cgd C rss=Cgd Capacitance Characteristics (Non-Repetitive) 0 Total Gate Charge, QG (nC) 515 25 Note: ID=4A 8 10 12 10 6 4 2 0 VDS=120V VDS=300V VDS=480V 20 Gate Charge Characteristics Coss Crss 400 Notes : 1. θJC (t) = 1.18℃/W Max. 2. Duty Factor , D=t1/t2 3.TJM-TC=PDM×θJC (t) 1 0.1 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve 0 0 TC (°C) 20 40 20 40 80 100 120 Power Dissipation 60 60 80 100 120 140 160 |
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