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4N60 Datasheet(PDF) 6 Page - Unisonic Technologies |
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4N60 Datasheet(HTML) 6 Page - Unisonic Technologies |
6 / 8 page 4N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 8 www.unisonic.com.tw QW-R502-061,E TYPICAL CHARACTERISTICS -100 Junction Temperature, TJ (℃) -50 50 200 100 150 1.2 0 1.1 1.0 0.9 0.8 Note: 1. VGS=0V 2. ID=250µA Breakdown Voltage Variation vs. Temperature -100 Junction Temperature, TJ (℃) -50 50 200 100 150 3.0 0 2.0 1.0 0.5 0.0 1.5 2.5 On-Resistance Junction Temperature Note: 1. VGS=10V 2. ID=4A 10 1 0.1 Drain-Source Voltage, VDS (V) 100 10 1 100µs 1000 10ms 1ms DC Operation in This Area is Limited by RDS(on) Maximum Safe Operating Area Case Temperature, TC (℃) 75 100 0 125 50 25 1 2 3 4 5 Maximum Drain Current vs. Case Temperature Notes: 1. TJ=25℃ 2. TJ=150℃ 3. Single Pulse 10 1 10 0.1 1 Drain-to-Source Voltage, VDS (V) On-State Characteristics 0.1 2 Gate-Source Voltage, VGS (V) Transfer Characteristics 46 8 10 150℃ Notes: 1. VDS=50V 2. 250µs Pulse Test 10 1 0.1 25℃ 5.0V Notes: 1. 250µs Pulse Test 2. TC=25℃ VGS Top : 10V 9V 8V 7V 6V 5.5V 5 V Bottorm :5.0V |
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