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2SC5824 Datasheet(PDF) 1 Page - Rohm |
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2SC5824 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page 2SC5824 Transistor Rev.A 1/3 Power transistor (60V, 3A) 2SC5824 Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071. Applications External dimensions (Unit : mm) Each lead has same dimensions Abbreviated symbol : UP MPT3 (3) (1) (2) 0.5 4.0 2.5 1.0 (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) NPN Silicon epitaxial planar transistor Structure Low frequency amplifier High speed switching Packaging specifications Taping 2SC5824 Type T100 1000 Package Basic ordering unit (pieces) Code Absolute maximum ratings (Ta=25 °C) Parameter V V V A mW ∗1 Pw=100ms ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 40x40x0.7(mm) ceramic substrate ∗2 ∗1 °C A °C VCBO VCEO IC PC Tj VEBO ICP Tstg Symbol 60 60 6 3 6 500 W ∗3 PC 2.0 150 −55~+150 Limits Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature |
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