1N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-052,D

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

1.2

A

1.2

Continuous Drain Current

0.76

A

Drain Current-Pulsed (Note 2)

4.8

A

Repetitive(Note 2)

4.0

mJ

Avalanche Energy

Single Pulse(Note 3)

50

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

40

W

Total Power Dissipation

Derate above 25°C

0.32

W/℃

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-251

112

TO-252

112

Thermal Resistance Junction-Ambient

TO-220

54

TO-251

12

TO-252

12

Thermal Resistance Junction-Case

TO-220

4

℃

/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Off Characteristics

Drain-Source Breakdown Voltage

600

V

10

Μa

Zero Gate Voltage Drain Current

100

Μa

Forward

100

Na

Gate-Body Leakage Current

Reverse

-100

Breakdown Voltage Temperature

Coefficient

△

T

0.4

V/℃

On Characteristics

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-Resistance

9.3

11.5

Ω

Forward Transconductance

0.9

S

Dynamic Characteristics

Input Capacitance

120

150

Pf

Output Capacitance

20

25

Pf

Reverse Transfer Capacitance

3.0

4.0

Pf