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1N60 Datasheet(PDF) 3 Page - Unisonic Technologies |
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1N60 Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 8 page 1N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-052,D ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Switching Characteristics Turn-On Delay Time tD (ON) 5 20 ns Rise Time tR 25 60 ns Turn-Off Delay Time tD (OFF) 7 25 ns Fall Time tF VDD=300V, ID=1.2A, RG=50Ω (Note 1,2) 25 60 ns Total Gate Charge QG 5.0 6.0 nC Gate-Source Charge QGS 1.0 nC Gate-Drain Charge QGD VDS=480V, VGS=10V, ID=1.2A (Note 1,2) 2.6 nC Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VSD VGS=0V, ISD = 1.2A, 1.4 V Continuous Drain-Source Current ISD 1.2 A Pulsed Drain-Source Current ISM 4.8 A Reverse Recovery Time tRR 160 ns Reverse Recovery Charge QRR VGS=0V, ISD = 1.2A di/dt = 100A/µs (Note1) 0.3 µC Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2% 2. Essentially Independent of Operating Temperature |
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