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NCP1207A_06 Datasheet(PDF) 5 Page - ON Semiconductor

Part No. NCP1207A_06
Description  PWM Current−Mode Controller for Free Running Quasi−Resonant Operation
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NCP1207A
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = 0°C to +125°C, Max TJ = 150°C,
VCC = 11 V unless otherwise noted)
Rating
Pin
Symbol
Min
Typ
Max
Unit
DYNAMIC SELF−SUPPLY
VCC Increasing Level at which the Current Source Turns−off
6
VCCOFF
10.8
12
12.9
V
VCC Decreasing Level at which the Current Source Turns−on
6
VCCON
9.1
10
10.6
V
VCC Decreasing Level at which the Latchoff Phase Ends
6
VCClatch
5.3
V
VCC Level at which Output Pulses are Disabled
6
UVLO
VCCON
−200mV
V
Internal IC Consumption, No Output Load on Pin 5,
FSW = 60 kHz
6
ICC1
1.0
1.3
(Note 1)
mA
Internal IC Consumption, 1.0 nF Output Load on Pin 5,
FSW = 60 kHz
6
ICC2
1.6
2.0
(Note 1)
mA
Internal IC Consumption in Latchoff Phase
6
ICC3
330
mA
INTERNAL STARTUP CURRENT SOURCE (TJ u 0°C)
High−voltage Current Source, VCC = 10 V
8
IC1
4.3
7.0
9.6
mA
High−voltage Current Source, VCC = 0
8
IC2
8.0
mA
DRIVE OUTPUT
Output Voltage Rise−time @ CL = 1.0 nF, 10−90% of Output Signal
5
Tr
40
ns
Output Voltage Fall−time @ CL = 1.0 nF, 10−90% of Output Signal
5
Tf
20
ns
Source Resistance
5
ROH
12
20
36
W
Sink Resistance
5
ROL
5.0
10
19
W
CURRENT COMPARATOR (Pin 5 Unloaded)
Input Bias Current @ 1.0 V Input Level on Pin 3
3
IIB
0.02
mA
Maximum Internal Current Setpoint
3
ILimit
0.92
1.0
1.12
V
Propagation Delay from Current Detection to Gate OFF State
3
TDEL
100
160
ns
Leading Edge Blanking Duration
3
TLEB
380
ns
Internal Current Offset Injected on the CS Pin during OFF Time
3
Iskip
200
mA
OVERVOLTAGE SECTION (VCC = 11 V)
Sampling Delay after ON Time
1
Tsample
4.5
ms
OVP Internal Reference Level
1
Vref
6.4
7.2
8.0
V
FEEDBACK SECTION (VCC = 11 V, Pin 5 Loaded by 1.0 kW)
Internal Pull−up Resistor
2
Rup
20
kW
Pin 3 to Current Setpoint Division Ratio
Iratio
3.3
Internal Soft−start
Tss
1.0
ms
DEMAGNETIZATION DETECTION BLOCK
Input Threshold Voltage (Vpin 1 Decreasing)
1
Vth
35
50
90
mV
Hysteresis (Vpin 1 Decreasing)
1
VH
20
mV
Input Clamp Voltage
High State (Ipin 1 = 3.0 mA)
Low State (Ipin 1 = −2.0 mA)
1
1
VCH
VCL
8.0
−0.9
10
−0.7
12
−0.5
V
V
Demag Propagation Delay
1
Tdem
210
ns
Internal Input Capacitance at Vpin 1 = 1.0 V
1
Cpar
10
pF
Minimum TOFF (Internal Blanking Delay after TON)
1
Tblank
8.0
ms
Timeout After Last Demag Transition
1
Tout
5.0
ms
Pin 1 Internal Impedance
1
Rint
28
kW
1. Max value at TJ = 0°C.




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