BUK9628-55 datasheet(2/8 Pages) PHILIPS

Part #	BUK9628-55

Description	TrenchMOS transistor Logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

BUK9628-55

Logic level FET

STATIC CHARACTERISTICS

T

j= 25˚C

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA;

55

-

V

voltage

T

j = -55˚C

50

-

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 1 mA

1

1.5

2

V

T

j = 175˚C

0.5

-

V

T

j = -55˚C

-

2.3

I

DSS

Zero gate voltage drain current

V

DS = 55 V; VGS = 0 V;

-

0.05

10

µA

T

j = 175˚C

-

500

µA

I

GSS

Gate source leakage current

V

GS = ±5 V; VDS = 0 V

-

0.02

1

µA

T

j = 175˚C

-

10

µA

±V

(BR)GSS

Gate-source breakdown

I

G = ±1 mA;

10

-

V

voltage

R

DS(ON)

Drain-source on-state

V

GS = 5 V; ID = 20 A

-

22

28

m

Ω

resistance

T

j = 175˚C

-

59

m

Ω

DYNAMIC CHARACTERISTICS

T

mb = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

g

fs

Forward transconductance

V

DS = 25 V; ID = 25 A

13

-

S

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

1300

1700

pF

C

oss

Output capacitance

-

250

300

pF

C

rss

Feedback capacitance

-

130

180

pF

t

d on

Turn-on delay time

V

DD = 30 V; ID = 25 A;

-

22

32

ns

t

r

Turn-on rise time

V

GS = 5 V; RG = 10 Ω

-

85

125

ns

t

d off

Turn-off delay time

Resistive load

-

70

95

ns

t

f

Turn-off fall time

-

64

85

ns

L

d

Internal drain inductance

Measured from upper edge of drain

-

2.5

-

nH

tab to centre of die

L

s

Internal source inductance

Measured from source lead

-

7.5

-

nH

soldering point to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

j = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

DR

Continuous reverse drain

-

40

A

current

I

DRM

Pulsed reverse drain current

-

160

A

V

SD

Diode forward voltage

I

F = 25 A; VGS = 0 V

-

0.95

1.2

V

I

F = 40 A; VGS = 0 V

-

1.0

-

t

rr

Reverse recovery time

I

F = 40 A; -dIF/dt = 100 A/µs;

-

41

-

ns

Q

rr

Reverse recovery charge

V

GS = -10 V; VR = 30 V

-

0.16

-

µC

April 1998

2

Rev 1.100

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