2SD880 datasheet(1/3 Pages) UTC

Part #	2SD880

Description	NPN EPITAXIAL TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTC2SD880

NPNEPITAXIAL PLANAR TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R203-013,B

NPN EPITAXIAL TRANSISTOR

DESCRIPTION

The UTC 2SD880 is designed for audio frequency power

amplifier applications.

FEATURE

*High DC Current Gain:

hFE=300(Max.)(VCE=5V,IC=0.5A)

*Low Saturation Voltage:

VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

*High Power Dissipation:

PC=30W (Ta=25

°C)

*Complementary to 2SB834

TO-220

1

1:BASE 2:COLLECTOR 3:EMITTER

*Pb-free plating product number: 2SD880L

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

VALUE

UNIT

Maximum Voltages and currents

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

60

V

Emitter to Base Voltage

VEBO

7

V

Collector Current

IC

3

A

Base Current

IB

0.5

A

Maximum Power Dissipation

Total Power Dissipation

PD

30

W

Maximum Temperature

Junction Temperature Range

TOPR

150

°C

Storage Temperature Range

TSTG

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS(Ta=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector-Emitter Breakdown Voltage

BVCEO

IC=50mA,IE=0

60

V

Collector Cut-Off Current

ICBO

VCB=60V,IE=0

100

µA

Emitter Cut-Off Current

IEBO

VEB=7V,IC=0

100

µA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=3A, IB=300mA

1

V

Base-Emitter Saturation Voltage

VBE(ON)

VCE=5V, IC=500mA

1

V

DC Current Gain

hFE

IC=500mA, VCE=5V

60

300

Current gain bandwidth product

fT

VCE =5V, IC =500mA

3

MHZ

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