MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC36V3436

3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFC36V3436 is an internally impedance-matched

GaAs power FET especially designed for use in 3.4 - 3.6

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

FEATURES

Class A operation

Internally matched to 50(ohm) system

High output power

P1dB = 4W (TYP.) @ f=3.4 - 3.6 GHz

High power gain

GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz

High power added efficiency

P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz

Low distortion [item -51]

IM3=-45dBc(Typ.) @Po=25dBm S.C.L.

APPLICATION

item 01 : 3.4 - 3.6 GHz band power amplifier

item 51 : 3.4 - 3.6 GHz band digital ratio communication

QUALITY GRADE

IG

RECOMMENDED BIAS CONDITIONS

VDS = 10 (V)

ID = 1.2 (A)

RG=100 (ohm)

ABSOLUTE MAXIMUM RATINGS

(Ta=25deg.C)

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

Symbol

Parameter

Ratings

Unit

making semiconductor products better and more reliable,

VGDO

Gate to drain voltage

-15

V

but there is always the possibility that trouble may occur

VGSO

Gate to source voltage

-15

V

with them. Trouble with semiconductors may lead to personal

ID

Drain current

3.75

A

injury, fire or property damage. Remember to give due

IGR

Reverse gate current

-10

mA

consideration to safety when making your circuit designs,

IGF

Forward gate current

21

mA

with appropriate measures such as (1)placement of

PT

Total power dissipation

*1

25

W

substitutive, auxiliary circuits, (2)use of non-flammable

Tch

Channel temperature

175

deg.C

material or (3)prevention against any malfunction or mishap.

Tstg

Storage temperature

-65 / +175

deg.C

*1 : Tc=25deg.C

ELECTRICAL CHARACTERISTICS

(Ta=25deg.C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

IDSS

Saturated drain current

VDS = 3V , VGS = 0V

-

-

3.75

A

gm

Transconductance

VDS = 3V , ID = 1.1A

-

1

-

S

VGS(off)

Gate to source cut-off voltage

VDS = 3V , ID = 10mA

-

-

-4.5

V

P1dB

Output power at 1dB gain

compression

35

36

-

dBm

GLP

Linear power gain

VDS=10V, ID(RF off)=1.2A, f=3.4 - 3.6GHz

11

12

-

dB

ID

Drain current

-

1.1

1.8

A

P.A.E.

Power added efficiency

-32

-

%

IM3

3rd order IM distortion

*1

-42

-45

-

dBc

Rth(ch-c)

Thermal resistance

*2

delta Vf method

-

5

6

deg.C/W

*1 : item -51,2 tone test,Po=25dBm Single Carrier Level,f=3.6GHz,delta f=5MHz

*2 : Channel-case

18-Sep-'98

MITSUBISHI

ELECTRIC

12.0

21.0 +/-0.3

10.7

(1)

17.0 +/-0.2

4

.

5

+

/

-

0

.

4

0

.

2

GF-8

1

.

6

2

M

I

N

(2)

1

2

.

9

+

/

-

0

.

2

2

M

I

N

OUTLINE DRAWING

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

0

.

1

2

.

6

+

/

-

0

.

2

R-1.6

(3)

(2)

1

1

.

3

0.6 +/-0.15

Unit : millimeters