2SB1412

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R209-021,A

ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)

PARAMETER

SYMBOL

LIMITS

UNIT

Collector-Base Voltage

-30

V

Collector-Emitter Voltage

-20

V

Emitter-Base Voltage

-6

V

Collector Current(DC)

-5

A

Collector Current(PULSE) Single pulse, Pw=10ms

-10

A

Collector Power Dissipation

1

W

Collector Power Dissipation (note2)

W

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2.When mounted on a 40*40*0.7mm ceramic board.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

-30

V

Collector Emitter Breakdown Voltage

-20

V

Emitter Base Breakdown Voltage

-6

V

Collector Cut-Off Current

-0.5

μA

Emitter Cut-Off Current

-0.5

μA

DC Current Transfer Ratio

82

390

Collector-Emitter Saturation Voltage

-1.0

V

Transition Frequency

120

MHz

Output Capacitance

Cob

60

pF

CLASSIFICATION OF hFE

RANK

P

Q

R

RANGE

82-180

120-270

180-390