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2N5401L-B-AB3-B Datasheet(PDF) 3 Page - Unisonic Technologies |
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2N5401L-B-AB3-B Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 2N5401 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R201-001,D TYPICAL CHARACTERISTICS DC Current Gain vs. Collector Current Collector Current , Ic (mA) Capacitance vs. Collector- Base Voltage Collector-Base Voltage (V) 0 4 8 12 16 20 -10 0 -10 1 -10 2 f=1MHz IE=0 V CE=-5V 10 3 10 2 10 1 10 0 -10 0 -10 3 -10 -1 -10 1 -10 2 Collector Current vs. Base-Emitter Voltage Base-Emitter V oltage (V) 0 -0.2 -0.4 -0 .6 -0 .8 -1.0 Saturation Voltage vs. Collector Current Collector Current , Ic (mA) VCE =-5 V -10 3 -10 2 -10 1 -10 0 -10 -2 -10 -1 -10 0 -10 1 -10 0 -10 3 -10 -1 -10 1 -10 2 IC=10*IB VBE(SAT) VCE (SAT) Current Gain-B andwidth Product vs. Collector Current Collector Current, Ic(mA) 10 3 10 2 10 1 10 0 -10 0 -10 3 -10 -1 -10 1 -10 2 V CE=- 10V |
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